Memory cell with independently-sized elements

ABSTRACT

Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.

PRIORITY INFORMATION

This application is a Divisional of U.S. application Ser. No. 14/867,185filed Sep. 28, 2015, which is a Divisional of U.S. application Ser. No.13/952,357 filed Jul. 26, 2013, the specifications of which areincorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor devices, andmore particularly to memory cell architectures and methods of formingthe same.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), resistance variable memory, andflash memory, among others. Types of resistance variable memory includephase change material (PCM) memory, programmable conductor memory, andresistive random access memory (RRAM), among others.

Non-volatile memory are utilized as memory devices for a wide range ofelectronic applications in need of high memory densities, highreliability, and data retention without power. Non-volatile memory maybe used in, for example, personal computers, portable memory sticks,solid state drives (SSDs), digital cameras, cellular telephones,portable music players such as MP3 players, movie players, and otherelectronic devices.

Constant challenges related to memory device fabrication are to decreasethe size of a memory device, increase the storage density of a memorydevice, reduce power consumption, and/or limit memory device cost. Somememory devices include memory cells arranged in a two dimensional array,in which memory cells are all arranged in a same plane. In contrast,various memory devices include memory cells arranged into a threedimensional (3D) array having multiple levels of memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a portion of a memory array inaccordance with a number of embodiments of the present disclosure.

FIG. 2 illustrates a three dimensional memory array in accordance with anumber of embodiments of the present disclosure.

FIGS. 3A and 3B illustrate cross-sectional views of memory cells inperpendicular directions in accordance with a number of embodiments ofthe present disclosure.

FIGS. 4A and 4B illustrate cross-sectional views in a same cross sectionof different sized stacks corresponding to a memory cell in accordancewith a number of embodiments of the present disclosure.

FIGS. 5A and 5B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized memory elements in accordancewith a number of embodiments of the present disclosure.

FIGS. 6A and 6B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized switch elements in accordancewith a number of embodiments of the present disclosure.

FIGS. 7A and 7B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized memory and switch elements inaccordance with a number of embodiments of the present disclosure.

FIGS. 8A and 8B illustrate cross-sectional views of stacks correspondingto a memory cell having non-vertical stack wall and different sizedswitch elements in accordance with a number of embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Memory cell architectures and methods of forming the same are provided.An example memory cell can include a switch element and a memory elementformed in series with the switch element. A smallest lateral dimensionof the switch element is different than a smallest lateral dimension ofthe memory element.

Embodiments of the present disclosure implement a memory cell in a crosspoint memory array in which the switch element dimensions areindependent from the memory element dimensions. Size independencebetween the switch element and the memory element allows for anunlimited number of combinations of memory element size relative toselect element size, which in turn facilitates addressing specificelectrical properties associated with particular cross point arrayapplications. With the ability to independently size the switch elementand the memory element in a same stack of materials forming a memorycell, e.g., using phase change material (PCM), in a cross point array,the current density for the memory element can be different than thecurrent density for the switch element. For example, in a phase changemechanism in the memory element can be improved without resulting inundue switching stress on the switch element.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 106 may referenceelement “06” in FIG. 1, and a similar element may be referenced as 306in FIG. 3A. Also, as used herein, “a number of” a particular elementand/or feature can refer to one or more of such elements and/orfeatures.

As used herein, the term “substantially” intends that the modifiedcharacteristic needs not be absolute, but is close enough so as toachieve the advantages of the characteristic. For example,“substantially parallel” is not limited to absolute parallelism, and caninclude orientations that are at least closer to a parallel orientationthan a perpendicular orientation. Similarly, “substantially orthogonal”is not limited to absolute orthogonalism, and can include orientationsthat are at least closer to a perpendicular orientation than a parallelorientation.

FIG. 1 is a perspective view of a portion of a memory array 100 inaccordance with a number of embodiments of the present disclosure. Inthe example shown in FIG. 1, memory array 100 is a cross pointmemory/switch memory array, e.g., a phase change memory array. However,embodiments of the present disclosure are not so limited. Embodiments ofthe present disclosure can comprise a two dimensional (2D) cross pointmemory array, or a three dimensional (3D) cross point memory array withmore decks between word lines and bit lines.

Array 100 can be a cross-point array having memory cells 102 located atthe intersections of a number of conductive lines, e.g., access lines104, which may be referred to herein as word lines, and a number ofconductive lines, e.g., data/sense lines 106, which may be referred toherein as bit lines. As illustrated in FIG. 1, word lines 104 can beparallel or substantially parallel to each other and can be orthogonalto bit lines 106, which can be parallel or substantially parallel toeach other. However, embodiments are not so limited. Word lines 104and/or bit lines 106 can be a conductive material such as tungsten,copper, titanium, aluminum, and/or other metals, for example. However,embodiments are not so limited. In a number of embodiments, array 100can be a portion, e.g., a level, of a three-dimensional array, e.g., amulti-level array, (described further with respect to FIG. 2) in whichother arrays similar to array 100 are at different levels, for exampleabove and/or below array 100.

Each memory cell 102 can include a memory element 114, e.g., storageelement, coupled in series with a respective switch element 110, e.g.,selector device, and/or access device. The memory cell can have a numberof electrodes adjacent the memory element 114 and switch element 110,including a first, e.g., top, electrode, second, e.g., middle,electrode, and/or third, e.g., bottom, electrode. The memory element 114can be, for example, a resistive memory element. The memory element 114can be formed between a pair of electrodes, e.g., first electrode 116and second electrode 112. The memory element can be comprised of aresistance variable material such as a phase change memory (PCM)material, for example. As an example, the PCM material can be achalcogenide alloy such as a Germanium-Antimony-Tellurium (GST)material, e.g., Ge−Sb−Te materials such as Ge₂Sb₂Te₅, Ge₁Sb₂Te₄,Ge₁Sb₄Te₇, Ge₈Sb₅Te₅, Ge₄Sb₄Te₇, etc., or anindium(In)-antimony(Sb)-tellurium(Te) (IST) material, e.g., In₂Sb₂Te₅,In₁Sb₂Te₄, In₁Sb₄Te₇, etc., among other phase change memory materials.The hyphenated chemical composition notation, as used herein, indicatesthe elements included in a particular mixture or compound, and isintended to represent all stoichiometries involving the indicatedelements. Other phase change memory materials can include Ge—Te, In—Se,Sb—Te, Ga—Sb, In—Sb, As—Te, Al—Te, Ge—Sb—Te, Te—Ge—As, In—Sb—Te,Te—Sn—Se, Ge—Se—Ga, Bi—Se—Sb, Ga—Se—Te, Sn—Sb—Te, In—Sb—Ge, Te—Ge—Sb—S,Te—Ge—Sn—O, Te—Ge—Sn—Au, Pd—Te—Ge—Sn, In—Se—Ti—Co, Ge—Sb—Te—Pd,Ge—Sb—Te—Co, Sb—Te—Bi—Se, Ag—In—Sb—Te, Ge—Sb—Se—Te, Ge—Sn—Sb—Te,Ge—Te—Sn—Ni, Ge—Te—Sn—Pd, and Ge—Te—Sn—Pt, for example. However,embodiments of the present disclosure are not limited to a particulartype of PCM material. Further, embodiments are not limited to memoryelements comprising PCM materials. For instance, the memory elements cancomprise a number of resistance variable materials such as binary metaloxides, colossal magnetoresistive materials, and/or variouspolymer-based resistive variable materials, among others.

For simplicity, FIG. 1 shows the memory element 114 and the switchelement 110 having similar dimensions. However, as is discussed below, amemory cell 102 can be formed with a memory element 114 having differentdimension(s), e.g., critical dimension, cross-sectional area, etc., thanthe switch element 110.

The switch element 110 can be a two terminal device such as a diode, anovonic threshold switch (OTS), or an ovonic memory switch (OMS).However, embodiments of the present disclosure are not limited to aparticular type of switch element 110. For example, the switch element110 can be a field effect transistor (FET), a bipolar junctiontransistor (BJT), or a diode, among other types of selector devices. Theswitch element 110 can be formed between a pair of electrodes, e.g., thesecond electrode and a third electrode 112 and 108. Although FIG. 1illustrates a configuration having the memory element 114 formed overthe switch element 110, embodiments of the present disclosure are not solimited. According to various embodiments of the present disclosure theswitch element 110 can be formed over the memory element 114, forexample.

Electrodes 108, 112, and/or 116 can comprise materials such as Ti, Ta,W, Al, Cr, Zr, Nb, Mo, Hf, B, C, conductive nitrides of theaforementioned materials, e.g., TiN, TaN, WN, CN, etc.), and/orcombinations thereof.

In a number of embodiments, the switch elements 110 corresponding tomemory cells 102 can be OTS's having a chalcogenide selector devicematerial. In such embodiments, the chalcogenide material of the switchelement 110 may not actively change phase, e.g., between amorphous andcrystalline, such as a chalcogenide resistance variable material of thememory element. Instead, the chalcogenide material of the switch elementcan change between an “on” and “off” state depending on the voltagepotential applied across memory cell 102. For example, the “state” ofthe OTS can change when a current through the OTS exceeds a thresholdcurrent or a voltage across the OTS exceeds a threshold voltage. Oncethe threshold current or voltage is reached, an on state can betriggered and the OTS can be in a conductive state. In this example, ifthe current or voltage potential drops below a threshold value, the OTScan return to a non-conductive state.

In a number of embodiments, the memory element 114 can comprise one ormore of the same material(s) as the switch element 110. However,embodiments are not so limited. For example, memory element 114 andswitch element 110 can comprise different materials.

Memory cells 102 can be programmed to a target data state, e.g.,corresponding to a particular resistance state, by applying sources ofan electrical field or energy, such as positive or negative electricalpulses, to the cells, e.g., to the storage element of the cells, for aparticular duration. The electrical pulses can be, for example, positiveor negative voltage or current pulses.

FIG. 2 illustrates a three dimensional (3D) memory array in accordancewith a number of embodiments of the present disclosure. The 3D memoryarray comprises a plurality of memory cells 202-1, 202-2, e.g., memoryelement in series with a switch element as described with respect toFIG. 1. FIG. 2 shows a first memory array comprising memory cells 202-1formed between word lines 204-1 and bits lines 206, and a second memoryarray comprising memory cells 202-2 formed between word lines 204-2 andbits lines 206. That is, the first memory array formed below bit lines206 and the second memory array formed above bit lines 206 share commonbit lines 206 therebetween.

FIG. 2 is a simplified diagram that does not precisely reflect the threedimensional physical dimensions of the various features illustrated,including the exact proximity of features to one another. FIG. 2 shouldnot be considered as to be representative of the precise topologicalpositioning of the various elements. Rather, FIG. 2 provides an overviewof the electrical scheme for a 3D memory array, and the approximaterelative arrangement of the various features. Although FIG. 2 shows a 3Darray comprising 2 memory arrays, embodiments of the present inventionare not so limited, and can include additional memory array(s) arrangedinto a number of levels.

FIGS. 3A and 3B illustrate cross-sectional views of memory cells inperpendicular directions in accordance with a number of embodiments ofthe present disclosure. FIG. 3A shows a cross-section in a firstdirection, e.g., side view, of a portion of a memory array, such as thatshown in FIG. 1. FIG. 3B shows a cross-section in a second direction,e.g., end view, of a portion of a memory array, such as that shown inFIG. 1. FIGS. 3A and 3B show some additional detail than that shown anddescribed with respect to FIG. 1. The memory cells shown in FIGS. 3A and3B can be similar to those described with respect to FIGS. 1 and 2.

As shown in FIG. 3A, a stack of materials can be formed over a word line304. For example, the stack of materials can include a third electrode308 formed over the word line 304, a switch element 310 formed over thethird electrode 308, a second electrode 312 formed over the switchelement 310, a memory element 314 formed over the second electrode 312,and a first electrode 316 formed over the memory element 314. A bit line306 can be formed over the stack extending left-to-right in FIG. 3A andinto-and-out-of the paper in FIG. 3B. Word line 304 extendsperpendicularly to bit line 306. That is, word line 304 extendsinto-and-out-of the paper in FIG. 3A and left-to-right in FIG. 3B.Likewise, the third electrode 308 can extend similarly to the word line304, as shown in FIGS. 3A and 3B.

For simplicity, all the components of the stack are shown having similarmeasurements in each of several directions. However, according toembodiments disclosed herein, the memory element 314 and switch element310 can have one or more different directions from one another and/orelectrode(s). In FIGS. 3A and 3B, the stack of materials is shown beingsquare when viewed from the side and end perspectives.

As shown in FIG. 3A, sealing material 321 can be formed around the wordline stacks and filling material 320 can be formed in the areas betweenthe word line stacks. A dielectric material 322 can be formed oversealing material 321 and filling material 320 in the areas between theword line stacks, as shown in FIG. 3A.

As shown in FIG. 3B, sealing material 324 can be formed around the bitline stacks and filling material 323 can be formed in the areas betweenthe bit line stacks. Dielectric material 322 can be formed over sealingmaterial 324 and filling material 323 in the areas between the bit linestacks, as shown in FIG. 3B.

The cross point array 100 of memory cells shown in FIGS. 1 and 2 can becreated through dry etch patterning in two perpendicular directions,e.g., corresponding to the direction of the word lines 304 and the bitlines 306. Materials corresponding to respective conductive lines andcomponents of the memory cell can be bulk deposited and etched to formthe various features. The dry etch patterning in two perpendiculardirections forms the various conductive lines and the stackscorresponding to individual memory cells. For example, a first etch candefine one direction of the stack, e.g., a row structure separated byfirst trenches, self-aligned to the underlying conductive lines, e.g.,word lines 304, which in turn can be connected to other circuitry.

As shown in FIG. 3A and described above, the row structures and trenchescan be sealed in between the word line 304, e.g., with sealing material321, and filled with filling material 320 and dielectric material 322.Subsequently, a material comprising the bit lines 306, e.g., conductivematerial, can be deposited on top of the row structures, sealingmaterial 321, filling material 320, and dielectric material 322. Asecond etch process can be used to form second trenches that define thebit lines 306 in a direction perpendicular to the word lines 304, andagain self-aligned to the stacks associated with the memory cells (downto the third electrodes 308). Thereafter, the second trenches and thirdelectrodes 308 can be sealed, e.g., by sealing materials 324 and fillingmaterial 323, and the second trenches filled by dielectric material 322.The result of the above-described sequence is an array of stacks, e.g.,active pillars, corresponding to respective memory cells and isolatedfrom one another by dielectric material 322. Word lines 304 below thememory cells connect the stacks in one direction, and bit lines 306above the memory cells connect the stacks in a perpendicular direction.

FIGS. 4A and 4B illustrate cross-sectional views in a same cross sectionof different sized stacks corresponding to a memory cell in accordancewith a number of embodiments of the present disclosure. That is, FIGS.4A and 4B show the same cross section before (FIG. 4A) and after (FIG.4B) a dimension modification, e.g., isotropic etch. The respectivestacks shown in FIGS. 4A and 4B can be formed by dry etch patterning intwo perpendicular directions described above with respect to FIGS. 3Aand 3B. For example, dry etching can be used to form the stackscorresponding to individual memory cells. As will be further describedaccording to embodiments herein, dry etching can be used to control thevarious dimensions of the stack, e.g., width and length of across-sectional area of the switch and memory elements, in a planeperpendicular to a direction between the switch element and the memoryelement.

For example in FIG. 4A, the dry etch patterning in two perpendiculardirections can be used to form a relatively wider stack (comprising wordline 404A, third electrode 408A, switch element 410A, second electrode412A, memory element 414A, and first electrode 416A). In FIG. 4B, arelatively thinner stack (comprising word line 404B, third electrode408B, switch element 410B, second electrode 412B, memory element 414B,and first electrode 416B). Because the dry etch patterning in twoperpendicular directions is self-aligning, all of the components of therelatively wider stack, shown in FIG. 4A, have the same dimensions.Further, all of the components are wider than all of the components ofthe relatively thinner stack shown in FIG. 4B. That is, using the dryetch patterning in two perpendicular directions to control width of thememory element, for example, results in the widths of all othercomponents in the stack being likewise controlled to the same width.

During the dry etch patterning in two perpendicular directions to formstacks corresponding to memory cells, it is beneficial to have aconstant vertical etch profile so as to better define bottom components.This ensures proper isolation throughout the stack (particularly forbottom components), and avoids worsening aspect ratios.

Critical dimension (CD) is the finest line resolvable associated withetch patterning, e.g., etching using a pattern to delineate areas to beetched from areas not to be etched. As used herein, lateral dimension(LD) is a dimension in a plane that is perpendicular to a directionbetween the switch element and a corresponding memory element of amemory cell, e.g., perpendicular to the orientation of the stack ofmaterials comprising the memory cell. The LD can be a CD (discussedabove) or a modified dimension (discussed below). For example, a stackcan have a rectangular volume. The rectangular volume can have a longestdimension in a direction the switch element and the corresponding memoryelement.

Modified dimension (MD) is a lateral dimension of a memory cell stackthat has been modified from those dimensions achieved by etchpatterning, e.g., such as by an additional isotropic etch. For example,MD can be a desired design rule implementation dimension. Smallestlateral dimension is a stack component, e.g., memory element, selectelement, etc., dimension other than length, e.g., width, depth, havingthe least magnitude, where length is oriented in the direction betweenmemory element and select element.

For dry etch patterning in two perpendicular directions, the word lineCD can be defined by lithography or pitch multiplication, hard mask, anddry etch, mainly during a first part of the process through hardmasking. According to various embodiments of the present disclosure, andas described below, the MD can be further defined from a CD byadditional selective etching, e.g., isotropic etching.

The lateral dimension, e.g., CD, of the relatively wider stack shown inFIG. 4A is greater than the lateral dimension, e.g., CD, of therelatively thinner stack shown in FIG. 4B. However, the LD of the memoryelement 414A is the same as the LD of the switch element 410A, in thestack shown in FIG. 4A. The LD of the memory element 414B is the same asthe LD of the switch element 410B in the stack shown in FIG. 4B. Thatis, the ratio of LD of the memory element to LD of the switch element,e.g., LD(ME)/LD(SE), is 1 for the stacks shown in FIGS. 4A and 4B.Electrical performance of a memory cell is related to the LD and profileof the memory elements 414A/B and switch elements 410A/B. Therefore, theelectrical performance of the memory elements 414A/B and switch elements410A/B is not independent in the stacks shown in FIGS. 4A and 4B.

FIGS. 5A and 5B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized memory elements in accordancewith a number of embodiments of the present disclosure. FIGS. 5A and 5Billustrate a configuration and method by which the LD of the memoryelement and the LD of the switch element can be independent.Functionality of a memory cell can be modulated by controlling thedimension(s), e.g., LD, of the memory element with respect to thedimension(s), e.g., LD, of the switch element. Where the dimension(s) ofthe memory element are not independent of the dimension(s) of the switchelement, increasing the current density in the memory element bydecreasing the dimension(s) of the memory element causes the currentdensity to correspondingly increase by the same amount in the switchelement. This can be detrimental to the functional characteristics ofthe switch element. That is, improving the operability of the memoryelement may decrease the operability of the switch element where thedimension(s) of the memory element are not independent of thedimension(s) of the switch element.

FIG. 5A shows a stack formed by having word line 504, third electrode508, switch element 510, second electrode 512, memory element 514A, andfirst electrode 516. FIG. 5B shows a stack formed by having word line504, third electrode 508, switch element 510, second electrode 512,memory element 514B, and first electrode 516. As shown in FIG. 5A,memory element 514A is relatively wider than memory element 514B shownin FIG. 5B. All other stack components are substantially the same sizein the stacks of FIGS. 5A and 5B.

According to various embodiments, the stack shown in FIG. 5B can beformed from the stack shown in FIG. 5A. To form the stack shown in FIG.5B, the stack shown in FIG. 5A can be subjected to a selective/isotropicprocess, which is step able to etch the memory element selectively withrespect to other materials in a non-directional manner, e.g., selectiveto a particular material such as that from which the memory element isformed more than other materials and isotropic such that etching canhave a horizontal effect. As shown, an isotropic dry etch that is ableto selectively etch the memory element material can recess the memoryelement sidewalls without affecting the other exposed stack componentmaterials. The selective/isotropic process includes an etch with anisotropic component (but does not necessarily intend that the etch be100% isotropic). Also, selectivity need not be 100% selective to theintended particular material and completely exclude all other materials.For example, the same chemistry can have different etch rates for PCMand OTS material, neither of which may be null.

After the selective etch, e.g., selective isotropic dry etch to thememory element material with respect to other materials, the memoryelement sidewalls 513 shown in FIG. 5B are recessed with respect toother portions of the stack, e.g., relative to word line 504, relativeto switch element 510, relative to an electrode, etc. Since theresulting lateral dimension of the memory element 514B is less than thelateral dimension of the switch element 510 (switch element dimensiondid not change by the selective isotropic dry etch that is selective tothe memory element material), LD(ME)/LD(E)<1.

Although FIG. 5A shows a complete stack is formed, which might then besubjected to an etch selective to the memory element material, e.g.,selective isotropic dry etch to a particular component material withrespect to other materials, according to various embodiments of thepresent disclosure, the selective etch, e.g., selective to the memoryelement material with respect to other materials, can be implementedafter directional etching of the memory element, but before directionaletching of the underlying component, e.g., second electrode 512.Therefore, another example dry etching sequence to accomplish a memoryelement of reduced dimension relative to other stack components, and/orword line 504 width, can be:

-   -   1. Directional etch first electrode 516    -   2. Directional etch memory element 514A    -   3. Selective etch able to etch the memory element 514A selective        with respect to other materials)    -   4. Directional etch second electrode 512    -   5. Directional etch switch element 510    -   6. Directional etch third electrode 508    -   7. Directional etch word line 504        The selective etch step can alternatively be performed at other        times during the process, e.g., after the directional etch of        word line 504, since the etch is performed to etch the memory        element and to avoid etching materials other than the memory        element material. The amount of reduction in a lateral dimension        of the material removed by the selective isotropic dry etch can        be controlled, for example, by the duration of the selective        isotropic dry etch, among others. With the ability to        independently adjust dimension(s) of one stack component, e.g.,        memory element 514A lateral dimension relative to switch element        510 lateral dimensions, electrical characteristics of the stack,        e.g., current density in memory element 514B and switch element        510 can be independently controlled to improve operating        characteristics.

According to a number of embodiments of the present disclosure, theselective isotropic dry etch can have a same chemistry as thedirectional etch for a particular material, e.g., memory elementmaterial. However, the etch conditions can be altered to achieve anisotropic etch. For example, a directional etch of the memory element514A can be implemented with a strong plasma, whereas the selectiveisotropic dry etch can use the same chemistry but different plasmaconditions such as different pressure and/or by changing the (ion) biasvoltage. According to a number of embodiments, the bias voltage (Vb) ofa conductor dry etching chamber can be turned off with the pressure setto be higher relative to the directional etch bias voltage. As a result,ions in the plasma may be less accelerated to a surface of an in-situwafer which is being processed in the etching chamber, e.g., upon whichthe stack is formed. Thus, there may be little, if any, bombardment onexposed surface layers. Hence, the plasma-wafer interaction is chemicalrather than physical.

According to some embodiments, a gas mixture including hydrogen-basedcomponents can be used for the step able to etch the memory elementmaterial selectively with respect to other materials, e.g., selectiveisotropic dry etch where the gas mixture is selective to etch the memoryelement material more than other materials. Further, an X-based gasmixture can be used for the step able to etch the switch elementmaterial selectively with respect to other materials, e.g., selectiveisotropic dry etch where the gas mixture is selective to etch the switchelement material more than other materials. In this example, X can beone or more of fluorine (F), chlorine (Cl) or bromine (Br). Otherisotropic etch processes can be used under certain circumstances such asa wet etch, e.g., where other stack components that may be affected arenot yet exposed by a directional dry etch.

FIGS. 6A and 6B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized switch elements in accordancewith a number of embodiments of the present disclosure. FIGS. 6A and 6Balso illustrate a configuration and method by which the LD of the memoryelement and the LD of the switch element can be independent by changingthe dimension(s) of a switch element relative to a memory element.

FIG. 6A shows a stack formed by having a word line 604, third electrode608, switch element 610A, second electrode 612, memory element 614, andfirst electrode 616. FIG. 6B shows a stack formed by having word line604, third electrode 608, switch element 610B, second electrode 612,memory element 614, and first electrode 616. As shown in FIG. 6A, switchelement 610A in the stack is relatively wider than switch element 610Bshown in the stack of FIG. 6B. In this example embodiment, all otherstack components can be substantially the same size between the stacksshown in FIGS. 6A and 6B.

According to various embodiments, the stack shown in FIG. 6B can beformed from the stack shown in FIG. 6A. To form the stack shown in FIG.6B, the stack shown in FIG. 6A can be subjected to a step able to etchthe memory element material selectively to other materials, e.g.,selective isotropic dry etch selective to etch a particular materialsuch as that from which the memory element is formed more than othermaterials and isotropic such that etching can have a horizontal etchingeffect on the switch element 610A. As shown, an etch selective to theswitch element material with respect to other materials can recess theswitch element sidewalls without affecting the other exposed stackcomponent materials, including the memory element.

After the selective etch, e.g., selective dry etch to etch the switchelement material more than other materials, the switch element sidewalls615 shown in FIG. 6B are recessed with respect to other portions of thestack, e.g., relative to word line 604, relative to memory element 614,relative to an electrode, etc. Since the resulting lateral dimension ofthe switch element 610B is less than the lateral dimension of the memoryelement 614 (memory element dimension did not change by the selectiveisotropic dry etch that is selective to the switch element material),LD(ME)/LD(E)>1.

Although FIG. 6A shows a complete stack is first formed, which mightthen be subjected to a selective isotropic dry etch (selective to aparticular component material), according to various embodiments of thepresent disclosure, the step able to etch the switch element materialselectively to other materials, e.g., selective dry etch that etches theswitch element material more than other materials, can be implementedafter directional etching of the switch element 610A, but beforedirectional etching of the underlying component, e.g., third electrode608. Therefore, another example dry etching sequence to accomplish aswitch element of reduced dimension relative to other stack components,and/or word line 604 width, can be:

-   -   1. Directional etch first electrode 616    -   2. Directional etch memory element 614    -   3. Directional etch second electrode 612    -   4. Directional etch switch element 610A    -   5. Selective etch able to etch the switch element 610A selective        to other materials.    -   6. Directional etch third electrode 608    -   7. Directional etch word line 604        The selective etch step can alternatively be performed at other        times during the process, e.g., after the directional etch of        word line 610A, since the etch is performed to etch the switch        element material and to avoid etching materials other than the        switch element material. The amount of reduction in a lateral        dimension of the material removed by the selective isotropic dry        etch can be controlled, for example, by the duration of the        selective isotropic dry etch, among others. With the ability to        independently adjust dimension(s) of another stack component,        e.g., switch element 610A lateral dimension relative to select        element 510 lateral dimensions, electrical characteristics of        the stack, e.g., current density in memory element 614 and        switch element 610B can further be independently controlled to        improve operating characteristics.

According to a number of embodiments of the present disclosure, theselective isotropic dry etch can be similar to that described above withrespect to the memory element 514A shown in FIG. 5A, except insteadbeing selective to the switch element 610A material. In this manner, itis possible to modulate the switch element 610B lateral dimension(s) asdesired relative to lateral dimension(s) of other stack components,e.g., memory element 614 and/or electrode(s) and/or word line 604.Considering the directional and selective isotropic dry etches, stackcomponent dimension(s), including critical dimension and/or area in aplane perpendicular to the stack orientation, can be controlled in oneor more of the following ways:

-   -   1. Reduce lateral dimension(s) of all components of the entire        stack (including both memory element and switch element) by        directional dry etch, e.g., via lithography or pitch        multiplication and hard mask etch process.    -   2. Reduce the lateral dimension(s) of only the memory element        via a selective isotropic dry etch (selective to memory element        material).    -   3. Reduce the lateral dimension(s) of only the switch element        via a selective isotropic dry etch (selective to switch element        material).        Reduction of lateral dimensions of components in the stack can        be implemented on walls of a stack, e.g., stack walls having a        direction parallel to edges of the word line and/or stack walls        having a direction parallel to edges of the word line. For        example, the reduction can be applied to walls along a single        direction or along multiple, e.g., perpendicular, directions, as        discussed further below. Stack component lateral dimension(s)        can be relatively increased, for example, by increasing the        lateral dimension(s) of the entire stack and selectively        reducing lateral dimension(s) of certain components, thus        leaving lateral dimension(s) of other stack components        relatively wider.

FIGS. 7A and 7B illustrate cross-sectional views of stacks correspondingto a memory cell having different sized memory and switch elements inaccordance with a number of embodiments of the present disclosure. FIGS.7A and 7B illustrate a combined configuration and method by which thelateral dimension(s), e.g., CD, of the memory element and the lateraldimension(s), e.g., CD, of the switch element can be independent.According to this example embodiment the lateral dimension(s) of both aswitch element and a memory element can be changed relative to otherstack components, e.g., electrodes, word line, bit line, etc.Furthermore, the lateral dimension(s) of the switch element and memoryelement can both be reduced by a same, or different, amount relative toone another.

FIG. 7A shows a stack formed by having a word line 704, third electrode708, switch element 710A, second electrode 712, memory element 714A, andfirst electrode 716. FIG. 7B shows a stack formed by having a word line704, third electrode 708, switch element 710B, second electrode 712,memory element 714B, and first electrode 716. As shown in FIG. 7A,switch element 710A is relatively wider than switch element 710B shownin FIG. 7B. Memory element 714A shown in FIG. 7A is relatively widerthan memory element 714B shown in FIG. 7B. Furthermore, FIG. 7B alsoshows that memory element 714B is thinner relative to switch element710B. Although, FIG. 7B shows memory element 714B being reduced by anamount such that it is thinner relative to switch element 710B,according to other embodiments switch element 710B can be reduced by anamount such that the switch element 710B has the same dimension(s) asthe memory element 714B, or is thinner relative to memory element 714B.In this example embodiment, all other stack components can besubstantially the same size between the stacks shown in FIGS. 7A and 7B.

According to various embodiments, the stack shown in FIG. 7B can beformed from the stack shown in FIG. 7A. To form the stack shown in FIG.7B, the stack shown in FIG. 7A can be subjected to a plurality ofselective isotropic dry etches, e.g., reach selective to a differentmaterial) so as to recess the material of the selected stack componentwithout affecting the other exposed stack component materials.

After a step able to etch the switch element material selectively toother materials, e.g., selective dry etch to etch the switch elementmaterial more than other materials, and after a step able to etch thememory element material selectively to other materials, e.g., selectiveisotropic dry etch to etch the memory element material more than othermaterials, the memory element sidewalls 717 and switch element sidewalls719 are both recessed with respect to other portions of the stack, e.g.,relative to word line 704, relative to an electrode, etc. Also theresulting lateral dimension of the memory element is less than thelateral dimension of the switch element, LD(ME)/LD(SE)<1. According tovarious other embodiments, the resulting lateral dimension of the memoryelement is greater than the lateral dimension of the switch element suchthat LD(ME)/LD(SE)>1.

As discussed with respect to FIGS. 5A, 5B, 6A, and 6B, although acompletely formed stack is shown in FIG. 7A, which can be subjected to aplurality of selective isotropic dry etches, e.g., one selective tomemory element material and one selective to switch element material,according to various embodiments of the present disclosure, theselective isotropic dry etches can be implemented respectively afterdirectional etching of the particular stack component to be subjected toa selective isotropic dry etch, but before directional etching of theunderlying stack component. Therefore, another example dry etchingsequence that can be used to accomplish the result shown by the stackshown in FIG. 7B can be:

-   -   1. Directional etch first electrode 716    -   2. Directional etch memory element 714A    -   3. Selective etch able to etch the memory element 714A selective        to other materials    -   4. Directional etch second electrode 712    -   5. Directional etch switch element 710A    -   6. Selective able to etch the switch element 710A selective to        other materials    -   7. Directional etch third electrode 708    -   8. Directional etch word line 704        The respective selective etch steps can alternatively be        performed in an order other than that shown in the process        above. The amount of reduction in a lateral dimension of the        material removed by a particular selective isotropic dry etch        can be controlled, for example, by the duration of the        particular selective isotropic dry etch. Respective selective        isotropic dry etches can have different durations, for example,        so as to independently control amounts of the selected material        to be removed thereby.

FIGS. 8A and 8B illustrate cross-sectional views of stacks correspondingto a memory cell having non-vertical stack wall and different sizedswitch elements in accordance with a number of embodiments of thepresent disclosure. For any number of reasons, stack walls may not beformed to be completely vertical. FIGS. 8A and 8B show that theselective isotropic dry etch techniques described above can be appliedto components of a stack having non-vertical stack wall to compensatefor the different component dimensions that can result when the stackwalls are not completely vertical.

That is, one or more selective isotropic dry etch can be used tomodulate the stack sidewall slope, e.g., the memory element and/orswitch element portions of the stack. Improving the verticality of astack sidewall initially having a tapered profile can improve theverticality of the word line and/or bit line as well. Generally, betterstack sidewall verticality facilitates better etching performance formemory cells with a large aspect ratio, and can reduce the risk of bitline-to-bit line leakage, as well.

FIG. 8A shows a stack formed by having word line 804, third electrode808, switch element 810A, second electrode 812, memory element 814, andfirst electrode 816. FIG. 8B shows a stack formed by having a word line804, third electrode 808, switch element 810B, second electrode 812,memory element 814, and first electrode 816. Similar to that shown anddescribed with respect to FIGS. 6A and 6B, the dimension(s) of switchelement 810A in the stack shown in FIG. 8A can be reduced to the resultshown for switch element 810B in the stack of FIG. 8B by a selectiveisotropic dry etch.

The switch element 810B in the stack shown in FIG. 8B is shown beingreduced in lateral dimension(s) to those of the memory element 814.Current density through a particular stack component, e.g., memoryelement, switch element, is determined by the area of the componentthrough which current can flow. As such, the memory element 814 in thestack shown in FIG. 8A can have a higher current density than the switchelement 810A since the lateral dimension(s) of the memory element 814(and thus the area bounded by the lateral dimension(s)) are less thanthe lateral dimension(s) of the switch element 810A. After a selectiveisotropic dry etch is used to reduce lateral dimension(s) of switchelement 810A, as shown in the stack of FIG. 8B, switch element 810B isnow the same size as memory element 814. Therefore, current densitiescan be made similar, e.g., brought back to an intended proportionalityassociated with vertical stack sidewall.

Some additional benefits can be realized from the memory cellconfigurations and methods for achieving same than those previouslydiscussed including word line and/or bit line cleaning. A selectiveisotropic dry etch process can help in removing resputtered polymers,e.g., directional dry etch by-products, from the stack sidewallscorresponding to the word line and/or bit line respectively. Often thepolymers on the stack sidewalls can induce a high vertical leakage in anarray having such memory cells if not completely removed by wetcleaning. According to some embodiments, the selective isotropic dryetch process described herein can function to clean the stack sidewallsfrom even very low volatile polymers.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of various embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the various embodiments ofthe present disclosure includes other applications in which the abovestructures and methods are used. Therefore, the scope of variousembodiments of the present disclosure should be determined withreference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

1.-16. (canceled)
 17. A memory cell comprising: a chalcogenide switchelement; and a memory element formed in series with the chalcogenideswitch element, wherein a lateral dimension of at least one of thechalcogenide switch element and the memory element is modified such thata smallest lateral dimension of the chalcogenide switch element isdifferent than a smallest lateral dimension of the memory element. 18.The memory cell of claim 17, wherein the smallest lateral dimension ofthe chalcogenide switch element is less than the smallest lateraldimension of the memory element.
 19. The memory cell of claim 18,further comprising an electrode, wherein the chalcogenide switchelement, the memory element, and the electrode are arranged in a stack,and wherein the smallest lateral dimension of the chalcogenide switchelement is less than a smallest lateral dimension of the electrode. 20.The memory cell of claim 19, wherein a cross-sectional area of thechalcogenide switch element in a plane perpendicular to a stack lengthis less than a cross-sectional area of the electrode in a planeperpendicular to the stack length.
 21. The memory cell of claim 17,wherein the chalcogenide switch element and the memory element arearranged in a stack, and wherein a cross-sectional area of thechalcogenide switch element in a plane perpendicular to a stack lengthis less than a cross-sectional area of the memory element in a planeperpendicular to the stack length.
 22. The memory cell of claim 17,wherein the smallest lateral dimension of the chalcogenide switchelement is greater than the smallest lateral dimension of the memoryelement.
 23. The memory cell of claim 17, further comprising anelectrode, wherein the chalcogenide switch element, the memory element,and the electrode are arranged in a stack, and wherein the smallestlateral dimension of the chalcogenide switch element and the smallestlateral dimension of the memory element are less than a smallest lateraldimension of the electrode.
 24. The memory cell of claim 17, wherein thechalcogenide switch element and the memory element have a non-verticalside-wall.
 25. The memory cell of claim 17, further comprising a firstelectrode formed between and in contact with a word line and thechalcogenide switch element, a second electrode formed between and incontact with the chalcogenide switch element and the memory element, anda third electrode formed in contact with the memory element.
 26. Amemory cell comprising: an electrode; a chalcogenide switch element; anda memory element formed in series with the chalcogenide switch element,wherein a lateral dimension of at least one of the chalcogenide switchelement and the memory element is modified such that a smallest lateraldimension of a first one of the chalcogenide switch element or memoryelement is different than a smallest lateral dimension of the electrode.27. The memory cell of claim 26, wherein the chalcogenide switchelement, the memory element, and the electrode are arranged in a stack.28. The memory cell of claim 27, wherein the electrode is locatedbetween and in contact with the chalcogenide switch element and thememory element.
 29. The memory cell of claim 28, wherein a smallestlateral dimension of a second one of the chalcogenide switch element orthe memory element is different than the smallest lateral dimension ofthe first one of the chalcogenide switch element or the memory element.30. The memory cell of claim 26, wherein the chalcogenide switch elementand the memory element are arranged in a stack, and wherein across-sectional area of the chalcogenide switch element in a planeperpendicular to a stack length is greater than a cross-sectional areaof the memory element in a plane perpendicular to a stack length.
 31. Amemory cell comprising: an electrode arranged in a stack; a chalcogenideswitch element arranged in the stack; and a chalcogenide memory elementformed in series with the chalcogenide switch element, wherein a lateraldimension of at least one of the chalcogenide switch element and thechalcogenide memory element is modified such that a smallest lateraldimension of the chalcogenide switch element is different than asmallest lateral dimension of the chalcogenide memory element anddifferent than a smallest lateral dimension of the electrode.
 32. Thememory cell of claim 31, wherein the smallest lateral dimension of thechalcogenide switch element is less than the smallest lateral dimensionof the chalcogenide memory element.
 33. The memory cell of claim 32,wherein the chalcogenide switch element and the chalcogenide memoryelement have a non-vertical side-wall.
 34. The memory cell of claim 31,wherein the smallest lateral dimension of the chalcogenide switchelement is greater than the smallest lateral dimension of thechalcogenide memory element.
 35. The memory cell of claim 34, whereinthe smallest lateral dimension of the chalcogenide switch element issmaller than the smallest lateral dimension of the electrode.
 36. Thememory cell of claim 31, wherein a cross-sectional area of thechalcogenide switch element in a plane perpendicular to a stack lengthis less than a cross-sectional area of the electrode in a planeperpendicular to the stack length.